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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU1706A
DESCRIPTION *High Voltage *High Speed Switching
APPLICATIONS *Designed for use in high frequency electronic lighting ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL VCESM VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage
VALUE 1750 750 12 5
UNIT V
Collector Current-Continuous Collector Current-Peak
Base Current-Continuous Base Current-peak
w w
scs .i w
V V A 8 A 3 5 100 150 -65~150 A A W
.cn mi e
IBM PC Tj Tstg
Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0; L= 25mH IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A VCE= VCESM; VBE= 0 VCE= VCESM; VBE= 0; TC=125 VEB= 12V; IC= 0 IC= 5mA; VCE= 10V MIN 750
BU1706A
TYP.
MAX
UNIT V
1.0 1.3 1.0 2.0 1.0
V V mA mA
Switching Times Resistive Load ton ts tf Turn-On Time Storage Time Fall Time
w
w. w
sem isc
IC= 400mA; VCE= 3V IC= 1.5A; VCE= 1V IC= 1.5A; IB1= -IB2= 0.3A
.cn i
12 5
8
35
1.5 6.5 1.0
s s s
isc Websitewww.iscsemi.cn


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